Datasheet > PSMN2R8-25MLC

PSMN2R8-25MLC

更新时间： 2024-09-16 11:13:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	1117K
描述
N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using NextPower TechnologyProduction

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PSMN2R8-25MLC 数据手册

PSMN2R8-25MLC

N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using

NextPower Technology

Rev. 3 — 15 June 2012

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 Low parasitic inductance and

 Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

resistance

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

1.3 Applications

 DC-to-DC converters

 Load switching

 Synchronous buck regulator

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j= 25°C

[1]

I_D

T_mb= 25 °C; V_GS= 10 V; see Figure 1

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

see Figure 10

3.25

2.45

3.75

2.8

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 10

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 4.5 V; I_D= 25 A; V_DS= 12.5 V;

see Figure 12; see Figure 13

3.9

Q_G(tot)

total gate charge

V_GS= 4.5 V; I_D= 25 A; V_DS= 12.5 V;

see Figure 12; see Figure 13

16.3

[1] Continuous current is limited by package.

12 3 4 5 6 7...14

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