Datasheet > PSMN013-30LL,115

PSMN013-30LL,115

更新时间： 2024-02-08 04:32:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	356K
描述
PSMN013-30LL - N-channel DFN3333-8 30 V 13 mΩ logic level MOSFET DFN 8-Pin

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技术参数
数据手册
替代型号

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PSMN013-30LL,115 技术参数

生命周期：	Obsolete	零件包装代码：	DFN
针数：	8	风险等级：	5.82
Base Number Matches：	1

PSMN013-30LL,115 数据手册

PSMN013-30LL

N-channel DFN3333-8 30 V 13 mΩ logic level MOSFET

DFN3333-8

Rev. 5 — 8 December 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product

is designed and qualified for use in a wide range of industrial, communications and power

supply equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for logic level gate drive

and conduction losses

sources

 Small footprint for compact designs

1.3 Applications

 Battery protection

 Load switching

 Power ORing

 DC-to-DC converters

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 150 °C

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

-55

150

°C

Static characteristics

R_DSondrain-source on-state resistance

V_GS= 4.5 V; I_D= 5 A; T_j= 25 °C;

see Figure 12

15.5

mΩ

µA

V_GS= 10 V; I_D= 5 A; T_j= 100 °C;

see Figure 13

17.9

V_GS= 10 V; I_D= 5 A; T_j= 25 °C;

see Figure 12

I_DSS

drain leakage current

V_DS= 30 V; V_GS= 0 V; T_j= 125 °C

12 3 4 5 6 7...15

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PSMN013-30LL,115 替代型号

型号	品牌	替代类型	描述	数据表
FDMC7692	FAIRCHILD	功能相似	N-Channel Power Trench® MOSFET 30 V, 13.3 A,

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