Datasheet > PSMN014-40HLD

PSMN014-40HLD

更新时间： 2023-09-03 20:33:00

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	282K
描述
N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technologyProduction

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PSMN014-40HLD 数据手册

PSMN014-40HLD

N-channel 40 V, 13.6 mOhm, logic level MOSFET in

LFPAK56D using NextPowerS3 technology

26 September 2022

Product data sheet

1. General description

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using

NextPowerS3 technology.

2. Features and benefits

•

Dual MOSFET

•

Repetitive avalanche rated

High reliability LFPAK56D package

Copper-clip, solder die attach

Qualified to 175 °C

3. Applications

•

Brushless DC motor control

DC-to-DC converters

High-performance synchronous rectification

High performance and high efficiency server power supply

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

175

°C

Static characteristics FET1 and FET2

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 10 A; T_j= 25 °C

V_GS= 10 V; I_D= 10 A; T_j= 105 °C

7.9

11.4

13.6

20.4

mΩ

10.9

Dynamic characteristics FET1 and FET2

Q_GD

gate-drain charge

I_D= 10 A; V_DS= 32 V; V_GS= 5 V;

T_j= 25 °C

1.8

4.2

Q_G(tot)

total gate charge

I_D= 10 A; V_DS= 32 V; V_GS= 10 V;

T_j= 25 °C

19.4

Avalanche Ruggedness FET1 and FET2

E_DS(AL)S

non-repetitive drain-

source avalanche

energy

I_D= 39.9 A; V_sup≤ 40 V; R_GS= 50 Ω;

V_GS= 10 V; T_j(init)= 25 °C; Fig. 4

[2] [3]

10.6

12 3 4 5 6 7...12

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