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PSMN015-100YL PDF预览

PSMN015-100YL

更新时间: 2023-09-03 20:31:34
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 720K
描述
N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56Production

PSMN015-100YL 数据手册

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PSMN015-100YL  
N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56  
4 November 2016  
Product data sheet  
1. General description  
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS  
technology. This product is designed and qualified for use in a wide range of power  
supply & motor control equipment.  
2. Features and benefits  
Advanced TrenchMOS provides low RDSon and low gate charge  
Logic level gate operation  
Avalanche rated, 100 % tested  
LFPAK provides maximum power density in a Power SO8 package  
3. Applications  
Synchronous rectification in power supply equipment  
Chargers & adaptors with Vout < 10 V  
Fast charge & USB-PD applications  
Battery powered motor control  
LED lighting & TV backlight  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
69  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
VGS = 5 V; Tmb = 25 °C; Fig. 2  
-
-
-
-
-
-
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
195  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11  
-
-
12.1  
16  
15  
-
mΩ  
nC  
ID = 20 A; VDS = 80 V; VGS = 5 V;  
Fig. 13; Fig. 14  
 
 
 
 

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