Datasheet > PSMN017-80PS

PSMN017-80PS

更新时间： 2024-10-02 06:05:35

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
14页	244K
描述
N-channel 80 V 17 mΩ standard level MOSFET in TO220

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PSMN017-80PS 数据手册

PSMN017-80PS

N-channel 80 V 17 mΩ standard level MOSFET in TO220

Rev. 01 — 11 March 2010

Objective data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High efficiency due to low switching

Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

103

175

T_j

junction temperature

-55

°C

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 25 A;

V_DS= 40 V; see Figure 14

and 15

6.3

Q_G(tot)

26.5

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 10 V; I_D= 10 A;

T_j= 100 °C; see Figure 12

mΩ

V_GS= 10 V; I_D= 10 A;

13.7 17

T_j= 25 °C; see Figure 13

12 3 4 5 6 7...14

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