Datasheet > PSMN021-100YL

PSMN021-100YL

更新时间： 2024-10-02 21:13:03

品牌	Logo	应用领域
恩智浦 - NXP		局域网开关脉冲晶体管
页数	文件大小	规格书
13页	294K
描述
POWER, FET

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技术参数
数据手册

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PSMN021-100YL 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

PSMN021-100YL 数据手册

PSMN021-100YL

N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56

4 November 2016

Product data sheet

1. General description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS

technology. This product is designed and qualified for use in a wide range of power

supply & motor control equipment.

2. Features and benefits

Advanced TrenchMOS provides low R_DSonand low gate charge

Logic level gate operation

Avalanche rated, 100 % tested

•

LFPAK provides maximum power density in a Power SO8 package

3. Applications

Synchronous rectification in power supply equipment

Chargers & adaptors with V_out< 10 V

Fast charge & USB-PD applications

Battery powered motor control

•

LED lighting & TV backlight

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

147

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 15 A; T_j= 25 °C; Fig. 11

17.4

13.3

mΩ

I_D= 15 A; V_DS= 80 V; V_GS= 5 V;

T_j= 25 °C; Fig. 13; Fig. 14

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