Datasheet > PSMN022-30PL

PSMN022-30PL

更新时间： 2024-11-17 11:13:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	807K
描述
N-channel 30 V 22 mΩ logic level MOSFETProduction

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PSMN022-30PL 数据手册

PSMN022-30PL

N-channel 30 V 22 mΩ logic level MOSFET

Rev. 02 — 1 November 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High efficiency due to low switching

Suitable for logic level gate drive

and conduction losses

sources

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 5 A;

T_j= 25 °C; see Figure 13

mΩ

V_GS= 10 V; I_D= 5 A;

mΩ

T_j= 25 °C; see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 4.5 V; I_D= 5 A;

V_DS= 15 V; see Figure 14;

see Figure 15

1.4

4.4

Q_G(tot)

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source avalanche

energy

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 30 A; V_sup≤ 30 V;

R_GS= 50 Ω; unclamped

12 3 4 5 6 7...15

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PSMN022-30PL 替代型号

型号	品牌	替代类型	描述	数据表
PHP36N03LT,127	NXP	功能相似	N-channel TrenchMOS logic level FET TO-220 3-Pin
PHP36N03LT	NXP	功能相似	N-channel TrenchMOS logic level FET

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