Datasheet > PSMN022-30BL

PSMN022-30BL

更新时间： 2024-11-17 01:18:03

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
14页	228K
描述
N-channel 30 V 22.6 m logic level MOSFET in D2PAK

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PSMN022-30BL 数据手册

PSMN022-30BL

D2P

N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK

Rev. 1 — 21 March 2012

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for logic level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switiching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

I_D

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 5 A; T_j= 100 °C;

see Figure 13

26.84 31.6

19.17 22.6

mΩ

V_GS= 10 V; I_D= 5 A; T_j= 25 °C;

see Figure 12

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 4.5 V; I_D= 5 A; V_DS= 15 V;

see Figure 14; see Figure 15

1.4

4.4

Q_G(tot)

Avalanche ruggedness

E_DS(AL)Snon-repetitive

V_GS= 10 V; T_j(init)= 25 °C; I_D= 30 A;

drain-source

V_sup≤ 30 V; R_GS= 50 Ω; unclamped

avalanche energy

12 3 4 5 6 7...14

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