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PSMN017-80PS,127 PDF预览

PSMN017-80PS,127

更新时间: 2024-10-02 15:48:27
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
14页 199K
描述
PSMN017-80PS - N-channel 80 V 17 mΩ standard level MOSFET in TO220 TO-220 3-Pin

PSMN017-80PS,127 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
针数:3Reach Compliance Code:not_compliant
风险等级:5.75Base Number Matches:1

PSMN017-80PS,127 数据手册

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PSMN017-80PS  
O-220AB  
T
N-channel 80 V 17 mstandard level MOSFET in TO220  
Rev. 3 — 27 September 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
High efficiency due to low switching  
Suitable for standard level gate drive  
and conduction losses  
sources  
1.3 Applications  
DC-to-DC converters  
Load switching  
Motor control  
Server power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
VDS  
ID  
drain-source voltage  
Tj 25 °C; Tj 175 °C  
-
-
-
-
80  
50  
V
A
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1  
Ptot  
Tj  
total power dissipation  
junction temperature  
Tmb = 25 °C; see Figure 2  
-
-
-
103  
W
-55  
175 °C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 10 A;  
Tj = 100 °C; see Figure 12  
-
-
15.2 29  
13.7 17  
mΩ  
mΩ  
VGS = 10 V; ID = 10 A;  
Tj = 25 °C; see Figure 13  
Dynamic characteristics  
QGD  
gate-drain charge  
total gate charge  
VGS = 10 V; ID = 25 A;  
VDS = 40 V; see Figure 14;  
see Figure 15  
-
-
6
-
-
nC  
nC  
QG(tot)  
26  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C;  
-
-
55  
mJ  
avalanche energy  
ID = 50 A; Vsup 80 V;  
RGS = 50 ; unclamped  
 
 
 
 
 

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