Datasheet > PSMN018-100ESF

PSMN018-100ESF

更新时间： 2024-10-03 01:16:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	256K
描述
NextPower 100 V, 18 mÎ© N-channel MOSFET in I2PAKpackage

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PSMN018-100ESF 数据手册

PSMN018-100ESF

NextPower 100 V, 18 mΩ N-channel MOSFET in I2PAK

package

10 April 2017

Product data sheet

1. General description

NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for

industrial & consumer applications.

2. Features and benefits

•

Optimised for fast switching, low spiking, high efficiency

•

Low Q_Gx R_DSonFOM for high efficiency switching applications

Low body diode losses (Q_rr) and fast recovery (t_rr)

Strong avalanche energy rating (E_AS

)

Avalanche rated & 100% tested

Ha-free & RoHS compliant I2PAK low-height package

3. Applications

•

Synchronous rectification in AC-to-DC and DC-to-DC applications

Brushed & BLDC motor control

UPS & solar inverter

LED lighting

Battery protection

Full-bridge & half-bridge applications

Flyback & resonant topologies

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

111

175

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

Fig. 10

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 100 °C;

Fig. 11

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 15 A; V_DS= 50 V; V_GS= 10 V;

Fig. 12; Fig. 13

4.2

Q_G(tot)

21.4

12 3 4 5 6 7...13

中文翻译

下载PDF

与PSMN018-100ESF相关器件

型号	品牌	获取价格	描述	数据表
PSMN018-100PSF	NEXPERIA	获取价格	NextPower 100 V, 18 mÎ© N-channel MOSFET in I
PSMN018-80YS	NEXPERIA	获取价格	N-channel LFPAK 80 V 18 mΩ standard level MOS
PSMN019-100YL	NEXPERIA	获取价格	N-channel 100 V, 19 mΩ logic level MOSFET in
PSMN019-100YLX	ETC	获取价格	MOSFET N-CH 100V LFPAK56
PSMN020-100YS	NXP	获取价格	N-channel 100V 20.5mΩ standard level MOSFET i
PSMN020-100YS	NEXPERIA	获取价格	N-channel 100V 20.5mΩ standard level MOSFET i
PSMN020-100YS,115	NXP	获取价格	PSMN020-100YS - N-channel 100V 20.5mΩ standar
PSMN020-150W	NXP	获取价格	TrenchMOS transistor
PSMN020-30MLC	NXP	获取价格	31.8A, 30V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, LFPAK33-4
PSMN020-30MLC	NEXPERIA	获取价格	N-channel 30 V 18.1 mΩ logic level MOSFET in