Datasheet > PSMN018-80YS

PSMN018-80YS

更新时间： 2024-10-03 11:13:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	825K
描述
N-channel LFPAK 80 V 18 mΩ standard level MOSFETProduction

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PSMN018-80YS 数据手册

PSMN018-80YS

N-channel LFPAK 80 V 18 mΩ standard level MOSFET

Rev. 02 — 28 October 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency gains in switching

LFPAK provides maximum power

power converters

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 5 A;

T_j= 100 °C; see Figure 12

mΩ

_GS= 10 V; I_D= 5 A;

T_j= 25 °C; see Figure 12;

see Figure 13

12 3 4 5 6 7...15

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