Datasheet > PSMN020-100YS,115

PSMN020-100YS,115

更新时间： 2024-11-16 21:11:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	300K
描述
PSMN020-100YS - N-channel 100V 20.5mΩ standard level MOSFET in LFPAK SOIC 4-Pin

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技术参数
数据手册
替代型号

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PSMN020-100YS,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	not_compliant	风险等级：	8
Base Number Matches：	1

PSMN020-100YS,115 数据手册

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PSMN020-100YS

N-channel 100V 20.5mΩ standard level MOSFET in LFPAK

7 November 2013

Product data sheet

1. General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

2. Features and benefits

Advanced TrenchMOS provides low RDSon and low gate charge

High efficiency gains in switching power converters

Improved mechanical and thermal characteristics

•

LFPAK provides maximum power density in a Power SO8 package

3. Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; Fig. 1

P_tot

T_j

total power dissipation T_mb= 25 °C; Fig. 2

junction temperature

106

175

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A; T_j= 100 °C;

Fig. 13

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

Fig. 14

20.5

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 30 A; V_DS= 50 V;

Fig. 15; Fig. 16

11.8

16.5

57.4

Q_G(tot)

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PSMN020-100YS,115 替代型号

型号	品牌	替代类型	描述	数据表
HAT2174H-EL-E	RENESAS	功能相似	Silicon N Channel Power MOS FET Power Switching

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