是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.71 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 55 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 80 V | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.017 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 200 A |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN017-80PS,127 | NXP |
获取价格 |
PSMN017-80PS - N-channel 80 V 17 mΩ standard | |
PSMN018-100ESF | NEXPERIA |
获取价格 |
NextPower 100 V, 18 mΩ N-channel MOSFET in I | |
PSMN018-100PSF | NEXPERIA |
获取价格 |
NextPower 100 V, 18 mΩ N-channel MOSFET in I | |
PSMN018-80YS | NEXPERIA |
获取价格 |
N-channel LFPAK 80 V 18 mΩ standard level MOS | |
PSMN019-100YL | NEXPERIA |
获取价格 |
N-channel 100 V, 19 mΩ logic level MOSFET in | |
PSMN019-100YLX | ETC |
获取价格 |
MOSFET N-CH 100V LFPAK56 | |
PSMN020-100YS | NXP |
获取价格 |
N-channel 100V 20.5mΩ standard level MOSFET i | |
PSMN020-100YS | NEXPERIA |
获取价格 |
N-channel 100V 20.5mΩ standard level MOSFET i | |
PSMN020-100YS,115 | NXP |
获取价格 |
PSMN020-100YS - N-channel 100V 20.5mΩ standar | |
PSMN020-150W | NXP |
获取价格 |
TrenchMOS transistor |