Datasheet > PSMN016-100YS_10

PSMN016-100YS_10

更新时间： 2024-09-30 06:05:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	240K
描述
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK

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PSMN016-100YS_10 数据手册

PSMN016-100YS

N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK

Rev. 03 — 30 March 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency gains in switching

LFPAK provides maximum power

power converters

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

100

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

117

175

T_j

junction temperature

-55

°C

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 51 A; V_sup≤ 100 V;

unclamped; R_GS= 50 Ω

avalanche energy

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 30 A;

V_DS= 50 V; see Figure 14

and 15

Q_G(tot)

12 3 4 5 6 7...15

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