Datasheet > PSMN015-60BS,118

PSMN015-60BS,118

更新时间： 2024-01-18 21:41:05

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MOSFET N-CH 60V 50A D2PAK

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PSMN015-60BS,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.8

PSMN015-60BS,118 数据手册

PSMN015-60BS

N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK

Rev. 2 — 1 March 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

T_mb= 25 °C; see Figure 2

I_D

P_tot

total power dissipation

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A; T_j= 100 °C;

see Figure 12

23.7

14.8

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

see Figure 13

12.6

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 25 A; V_DS= 30 V;

see Figure 14; see Figure 15

4.7

Q_G(tot)

20.9

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C; I_D= 50 A;

V_sup≤ 60 V; R_GS= 50 Ω; unclamped

12 3 4 5 6 7...13

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