是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 1.68 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 44 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.0148 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 201 A |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PSMN034-100PS | NXP |
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PSMN2R7-30PL | NXP |
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PSMN6R5-80PS | NXP |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN015-60PS,127 | NXP |
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PSMN015-60PS - N-channel 60 V 14.8 mΩ standar | |
PSMN015-60PS_11 | NXP |
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N-channel 60 V 14.8 mΩ standard level MOSFET | |
PSMN016-100BS | NXP |
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TRANSISTOR 57 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET Gen | |
PSMN016-100BS | NEXPERIA |
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N-channel 100V 16 mΩ standard level MOSFET in | |
PSMN016-100BS,118 | NXP |
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PSMN016-100BS - N-channel 100V 16 mΩ standard | |
PSMN016-100PS | NXP |
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N-channel 100V 16 mΩ standard level MOSFET in | |
PSMN016-100PS | NEXPERIA |
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N-channel 100V 16 mΩ standard level MOSFET in | |
PSMN016-100YS | NXP |
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N-channel 100 V 16.3 mΩ standard level MOSFET | |
PSMN016-100YS | NEXPERIA |
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N-channel 100 V 16.3 mΩ standard level MOSFET | |
PSMN016-100YS,115 | NXP |
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PSMN016-100YS - N-channel 100 V 16.3 mΩ stand |