Datasheet > PSMN015-60PS,127

PSMN015-60PS,127

更新时间： 2024-11-16 20:11:35

品牌	Logo	应用领域
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页数	文件大小	规格书
14页	196K
描述
PSMN015-60PS - N-channel 60 V 14.8 mΩ standard level MOSFET TO-220 3-Pin

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技术参数
数据手册

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PSMN015-60PS,127 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TO-220	针数：	3
Reach Compliance Code：	not_compliant	风险等级：	5.74
Base Number Matches：	1

PSMN015-60PS,127 数据手册

PSMN015-60PS

O-220AB

N-channel 60 V 14.8 mΩ standard level MOSFET

Rev. 3 — 23 June 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

V_DS

I_D

drain-source voltage

T_j≥ 25 °C; T_j≤ 175 °C

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A;

T_j= 100 °C; see Figure 12

23.7 mΩ

V_GS= 10 V; I_D= 15 A;

12.6 14.8 mΩ

T_j= 25 °C; see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 25 A;

V_DS= 30 V; see Figure 14;

see Figure 15

4.7

Q_G(tot)

20.9

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 50 A; V_sup≤ 60 V;

R_GS= 50 Ω; unclamped

12 3 4 5 6 7...14

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