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PSMN014-40YS PDF预览

PSMN014-40YS

更新时间: 2024-09-29 11:11:47
品牌 Logo 应用领域
安世 - NEXPERIA 开关脉冲晶体管
页数 文件大小 规格书
15页 819K
描述
N-channel LFPAK 40 V, 14 mΩ standard level MOSFETProduction

PSMN014-40YS 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N雪崩能效等级(Eas):21 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):46 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-235JESD-30 代码:R-PSSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):183 A
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PSMN014-40YS 数据手册

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PSMN014-40YS  
N-channel LFPAK 40 V, 14 mstandard level MOSFET  
Rev. 03 — 25 October 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
„ Advanced TrenchMOS provides low  
„ Improved mechanical and thermal  
RDSon and low gate charge  
characteristics  
„ High efficiency gains in switching  
„ LFPAK provides maximum power  
power converters  
density in a Power SO8 package  
1.3 Applications  
„ DC-to-DC convertors  
„ Lithium-ion battery protection  
„ Load switching  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
-
-
-
-
40  
46  
V
A
ID  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1  
Ptot  
Tj  
total power dissipation  
junction temperature  
Tmb = 25 °C; see Figure 2  
-
-
-
56  
W
-55  
175 °C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 5 A;  
Tj = 100 °C; see Figure 12  
-
-
-
20  
14  
mΩ  
mΩ  
V
GS = 10 V; ID = 5 A;  
11  
Tj = 25 °C; see Figure 13  

PSMN014-40YS 替代型号

型号 品牌 替代类型 描述 数据表
PSMN028-100YS NXP

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