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PSMN015-100B PDF预览

PSMN015-100B

更新时间: 2024-11-17 11:11:07
品牌 Logo 应用领域
安世 - NEXPERIA 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 706K
描述
N-channel TrenchMOS SiliconMAX standard level FETProduction

PSMN015-100B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:5.69Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):320 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):240 A
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN015-100B 数据手册

 浏览型号PSMN015-100B的Datasheet PDF文件第2页浏览型号PSMN015-100B的Datasheet PDF文件第3页浏览型号PSMN015-100B的Datasheet PDF文件第4页浏览型号PSMN015-100B的Datasheet PDF文件第5页浏览型号PSMN015-100B的Datasheet PDF文件第6页浏览型号PSMN015-100B的Datasheet PDF文件第7页 
PSMN015-100B  
N-channel TrenchMOS SiliconMAX standard level FET  
Rev. 06 — 17 December 2009  
Product data sheet  
1. Product profile  
1.1 General description  
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in  
a plastic package using TrenchMOS technology. This product is designed and qualified for  
use in computing, communications, consumer and industrial applications only.  
1.2 Features and benefits  
„ Low conduction losses due to low  
„ Rated for avalanche ruggedness  
„ Switched-mode power supplies  
on-state resistance  
1.3 Applications  
„ DC-to-DC convertors  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
100  
75  
V
A
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1 and 3  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
300  
-
W
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 75 A;  
VDS = 80 V; Tj = 25 °C;  
see Figure 11  
35  
nC  
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 25 A;  
Tj = 25 °C;  
-
12  
15  
mΩ  
see Figure 9 and 10  

PSMN015-100B 替代型号

型号 品牌 替代类型 描述 数据表
PSMN015-100B,118 NXP

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