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PSMN015-100P PDF预览

PSMN015-100P

更新时间: 2024-11-15 22:33:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 105K
描述
N-channel TrenchMOS transistor

PSMN015-100P 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC, SC-46, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.15Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):320 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.015 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):230 W
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PSMN015-100P 数据手册

 浏览型号PSMN015-100P的Datasheet PDF文件第2页浏览型号PSMN015-100P的Datasheet PDF文件第3页浏览型号PSMN015-100P的Datasheet PDF文件第4页浏览型号PSMN015-100P的Datasheet PDF文件第5页浏览型号PSMN015-100P的Datasheet PDF文件第6页浏览型号PSMN015-100P的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
PSMN015-100B, PSMN015-100P  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
VDSS = 100 V  
ID = 75 A  
• Low thermal resistance  
g
RDS(ON) 15 mΩ  
s
GENERAL DESCRIPTION  
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in  
each package at each voltage rating.  
Applications:-  
• d.c. to d.c. converters  
• switched mode power supplies  
The PSMN015-100P is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PSMN015-100B is supplied in the SOT404 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404 (D2PAK)  
PIN  
DESCRIPTION  
tab  
tab  
1
2
gate  
drain1  
3
source  
drain  
2
tab  
1
3
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
-
-
-
100  
100  
± 20  
752  
V
V
V
A
A
A
W
˚C  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
53  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
240  
230  
175  
- 55  
1 It is not possible to make connection to pin:2 of the SOT404 package  
2 Maximum continuous current limited by package  
August 1999  
1
Rev 1.100  

PSMN015-100P 替代型号

型号 品牌 替代类型 描述 数据表
PSMN009-100P,127 NXP

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N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
BUK9510-100B,127 NXP

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N-channel TrenchMOS logic level FET TO-220 3-Pin

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