是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | PLASTIC, SC-46, 3 PIN | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.15 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 320 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 75 A |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.015 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 230 W |
最大脉冲漏极电流 (IDM): | 240 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PSMN009-100P,127 | NXP |
类似代替 |
N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin | |
BUK9510-100B,127 | NXP |
类似代替 |
N-channel TrenchMOS logic level FET TO-220 3-Pin |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN015-100YL | NEXPERIA |
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N-channel 100 V, 15 mΩ logic level MOSFET in | |
PSMN015-100YSF | NEXPERIA |
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NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 packageQualification | |
PSMN015-110P | NXP |
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TrenchMOS Standard level FET | |
PSMN015-60BS | NXP |
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TRANSISTOR 50 A, 60 V, 0.0148 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET Gen | |
PSMN015-60BS | NEXPERIA |
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N-channel 60 V 14.8 mΩ standard level MOSFET | |
PSMN015-60BS,118 | ETC |
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MOSFET N-CH 60V 50A D2PAK | |
PSMN015-60PS | NXP |
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N-channel 60 V 14.8 mΩ standard level MOSFET | |
PSMN015-60PS | NEXPERIA |
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N-channel 60 V 14.8 mΩ standard level MOSFETP | |
PSMN015-60PS,127 | NXP |
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PSMN015-60PS - N-channel 60 V 14.8 mΩ standar | |
PSMN015-60PS_11 | NXP |
获取价格 |
N-channel 60 V 14.8 mΩ standard level MOSFET |