Datasheet > PSMN015-100P

PSMN015-100P

更新时间： 2023-09-03 20:28:57

品牌	Logo	应用领域
安世 - NEXPERIA		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	707K
描述
N-channel TrenchMOS SiliconMAX standard level FETProduction

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中文翻译

获取价格

技术参数
数据手册

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PSMN015-100P 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.7	配置：	Single
最大漏极电流 (Abs) (ID)：	75 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	230 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

PSMN015-100P 数据手册

PSMN015-100P

N-channel TrenchMOS SiliconMAX standard level FET

Rev. 06 — 17 December 2009

Product data sheet

1. Product profile

1.1 General description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in

a plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

Rated for avalanche ruggedness

Switched-mode power supplies

on-state resistance

1.3 Applications

DC-to-DC convertors

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

100

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1 and 3

P_tot

total power

dissipation

T_mb= 25 °C;

see Figure 2

300

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 75 A;

V_DS= 80 V; T_j= 25 °C;

see Figure 11

Static characteristics

R_DSon

drain-source

V_GS= 10 V; I_D= 25 A;

mΩ

on-state resistance

T_j= 25 °C; see Figure 9 and 10

12 3 4 5 6 7...12

中文翻译

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