Datasheet > PSMN013-30MLC

PSMN013-30MLC

更新时间： 2024-11-17 11:15:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	293K
描述
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower TechnologyProduction

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PSMN013-30MLC 数据手册

PSMN013-30MLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33

using NextPower Technology

23 February 2018

Product data sheet

1. General description

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

2. Features and benefits

•

Low parasitic inductance and resistance

•

Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

3. Applications

•

DC-to-DC converters

Load switching

Synchronous buck regulator

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j= 25 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 10 A; T_j= 25 °C;

Fig. 10

14.65 16.9

mΩ

V_GS= 10 V; I_D= 10 A; T_j= 25 °C;

Fig. 10

11.8

13.6

Dynamic characteristics

Q_GD

gate-drain charge

I_D= 10 A; V_DS= 15 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

Q_G(tot)

total gate charge

I_D= 10 A; V_DS= 15 V; V_GS= 10 V;

Fig. 12; Fig. 13

12 3 4 5 6 7...14

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