Datasheet > PSMN013-80YS

PSMN013-80YS

更新时间： 2024-02-03 23:44:22

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	221K
描述
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET

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PSMN013-80YS 数据手册

PSMN013-80YS

N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET

Rev. 01 — 25 June 2009

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency gains in switching

LFPAK provides maximum power

power converters

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max Unit

V_DS

I_D

drain-source voltage

T_j≥ 25 °C; T_j≤ 150 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

T_mb= 25 °C; see Figure 2

drain current

P_tot

T_j

total power dissipation

junction temperature

106

175

°C

-55

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source V_GS= 10 V; T_j(init)= 25 °C; I_D= 55 A; V_sup≤ 80 V;

avalanche energy

R_GS= 50 Ω; unclamped

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 10 V; I_D= 25 A; V_DS= 40 V; see Figure 14;

see Figure 15

Q_G(tot)

total gate charge

V_GS= 10 V; I_D= 25 A; V_DS= 40 V; see Figure 14;

see Figure 15

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A; T_j= 100 °C; see Figure 12

V_GS= 10 V; I_D= 15 A; T_j= 25 °C; see Figure 13

19.8 mΩ

12.9 mΩ

9.7

12 3 4 5 6 7...13

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