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NVMFD5C478NLT1G

更新时间： 2024-09-30 11:13:07
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安森美 - ONSEMI /
页数 文件大小 规格书
7页 212K
描述
双 N 沟道功率 MOSFET 40V，29A，14.5mΩ

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NVMFD5C478NLT1G 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：not_compliantFactory Lead Time：8 weeks
风险等级：1.49JESD-609代码：e3
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NVMFD5C478NLT1G 数据手册

 浏览型号NVMFD5C478NLT1G的Datasheet PDF文件第2页浏览型号NVMFD5C478NLT1G的Datasheet PDF文件第3页浏览型号NVMFD5C478NLT1G的Datasheet PDF文件第4页浏览型号NVMFD5C478NLT1G的Datasheet PDF文件第5页浏览型号NVMFD5C478NLT1G的Datasheet PDF文件第6页浏览型号NVMFD5C478NLT1G的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – Power, Dual  
N-Channel  
40 V, 14.5 mW, 29 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
14.5 mW @ 10 V  
25 mW @ 4.5 V  
40 V  
29 A  
NVMFD5C478NL  
Dual−Channel  
D1  
D2  
Features  
• Small Footprint (5 x 6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
G1  
G2  
• Low Capacitance to Minimize Driver Losses  
• NVMFD5C478NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
S1  
S2  
• These Devices are Pb−Free and are RoHS Compliant  
MARKING AND PIN  
CONNECTION DIAGRAM  
D1 D1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
V
DSS  
1
XXXXXX  
AYWZZ  
Gate−to−Source Voltage  
V
GS  
20  
V
DFN8, 5x6  
(S08FL)  
CASE 506BT  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
29  
A
C
D
D2 D2  
q
JC  
T
C
20.6  
23  
(Notes 1, 2, 3, 4)  
Steady  
State  
XXXXXX = 5C478L (NVMFD5C478NL) or  
478LWF (NVMFD5C478NLWF)  
Power Dissipation  
T
C
P
W
A
D
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
R
(Notes 1, 2, 3)  
q
JC  
T
C
= 100°C  
12  
Continuous Drain  
Current R  
T = 25°C  
I
10.5  
7.5  
3.1  
1.5  
98  
A
D
q
JA  
T = 100°C  
A
(Notes 1 & 3, 4)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
R
(Notes 1, 3)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
19  
48  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 1.4 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
6.4  
Unit  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
R
48.8  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
July, 2019 − Rev. 1  
NVMFD5C478NL/D  
 
1234567

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