Datasheet > NVMFD6H846NLT1G

NVMFD6H846NLT1G

更新时间： 2024-11-17 02:52:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	210K
描述
MOSFET - Power, Dual N-Channel

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中文翻译

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数据手册

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NVMFD6H846NLT1G 数据手册

MOSFET - Power, Dual

N-Channel

80 V, 15 mW, 31 A

NVMFD6H846NL

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• NVMFD6H846NLWF − Wettable Flank Option for Enhanced

Optical Inspection

15 mW @ 10 V

19 mW @ 4.5 V

80 V

31 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Dual N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

(Notes 1, 2)

= 100°C

Continuous Drain

Current R

T = 25°C

9.4

6.7

3.2

1.6

114

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Steady

State

D1 D1

Power Dissipation

T = 25°C

(Notes 1, 2)

XXXXXX

AYWZZ

T = 100°C

DFN8 5x6

(SO8FL)

Pulsed Drain Current

T = 25°C, t = 10 ms

CASE 506BT

D2 D2

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

= Assembly Location

= Year

Source Current (Body Diode)

= Work Week

= Lot Traceability

Single Pulse Drain−to−Source Avalanche

201

Energy (T = 25°C, I

= 1.1 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

4.4

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

March, 2020 − Rev. 0

NVMFD6H846NL/D

12 3 4 5 6 7

中文翻译

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与NVMFD6H846NLT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFD6H846NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Dual N-Channel
NVMFD6H852NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80 V, 25 A, 25.5
NVMFD6H852NLWFT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80 V, 25 A, 25.5
NVMFS003N10MCT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel 100 V, 3.1
NVMFS003P03P8ZT1G	ONSEMI	获取价格	Power MOSFET - Power, Single P-Channel, SO8-F
NVMFS005N10MCLT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel100 V, 5.1 m
NVMFS014P04M8LT1G	ONSEMI	获取价格	Power MOSFET, Single P-Channel, -40 V, 13.8 m
NVMFS015N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 54A, 12.2
NVMFS016N06CT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 60V, 33A, 15.6
NVMFS016N10MCLT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel 100 V, 14 m

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