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NVMFS024N06CT1G

更新时间： 2024-09-30 11:13:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 226K
描述
MOSFET – Power, Single, N-Channel

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NVMFS024N06CT1G 数据手册

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MOSFET - Power, Single  
N-Channel, SO-8 FL  
60 V, 22 mW, 25 A  
NVMFS024N06C  
Features  
• Small Footprint (5x6 mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• NVMFWS024N06C − Wettable Flank Option for Enhanced Optical  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Inspection  
60 V  
22 mW @ 10 V  
25 A  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
D (5−8)  
Applications  
• Power Tools, Battery Operated Vacuums  
• UAV/Drones, Material Handling  
• BMS/Storage, Home Automation  
G (4)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
S (1,2,3)  
N−CHANNEL MOSFET  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
V
V
DSS  
60  
20  
25  
Gate−to−Source Voltage  
V
GS  
V
MARKING  
DIAGRAM  
D
Continuous Drain  
T
= 25°C  
I
D
A
C
Steady  
State  
Current R  
q
JC  
T
C
= 100°C  
17  
(Notes 1, 3)  
S
S
S
D
D
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Power Dissipation  
T
= 25°C  
P
D
28  
14  
8
W
A
C
Steady  
State  
XXXXXX  
AYWZZ  
R
(Note 1)  
q
JC  
T
C
= 100°C  
G
Continuous Drain  
Current R  
T = 25°C  
I
D
A
1
Steady  
State  
D
q
JA  
T = 100°C  
A
6
(Notes 1, 2, 3)  
XXXXXX = 24N06C  
XXXXXX = (NVMFS024N06C) or  
XXXXXX = 24N06W  
Power Dissipation  
T = 25°C  
P
D
3.4  
1.7  
158  
W
A
Steady  
State  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
XXXXXX = (NVMFWS024N06C)  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
A
A
p
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Operating Junction and Storage Temperature T , T  
−55 to  
+175  
°C  
J
STG  
Range  
Source Current (Body Diode)  
I
S
23  
14  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 5.3 A  
)
L
pk  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
5.3  
Unit  
Junction−to−Case – Steady State (Note 1)  
Junction−to−Ambient – Steady State (Note 1)  
R
°C/W  
q
JC  
R
43.4  
q
JA  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
December, 2019 − Rev. 1  
NVMFS024N06C/D  
 
1234567

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