Datasheet > NVMFS4C05N

NVMFS4C05N

更新时间： 2024-09-30 01:05:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	76K
描述
Single NâChannel Power MOSFET

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中文翻译

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数据手册

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NVMFS4C05N 数据手册

NVMFS4C05N

Power MOSFET

30 V, 116 A, Single N−Channel, SO−8 FL

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical

Inspection

http://onsemi.com

MAX

I MAX

(BR)DSS

DS(ON)

• AEC−Q101 Qualified and PPAP Capable

3.4 mW @ 10 V

5.0 mW @ 4.5 V

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

30 V

116 A

Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

D (5−8)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

G (4)

Continuous Drain

Current R

T = 25°C

24.7

19.6

3.61

T = 80°C

(Notes 1, 2 and 4)

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

T = 25°C

(Notes 1, 2

and 4)

MARKING

DIAGRAM

Continuous Drain

Current R

(Notes 1, 2, 3

and 4)

= 25°C

= 80°C

116

Steady

State

4C05xx

AYWZZ

Continuous Drain

Current R

(Notes 1, 2, 3

and 4)

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

4C05N = Specific Device Code for

NVMFS4C05N

Power Dissipation

= 25°C

(Notes 1, 2, 3

4C05WF= Specific Device Code of

NVMFS4C05NWF

and 4)

Pulsed Drain

Current

T = 25°C, t = 10 ms

174

= Assembly Location

= Year

= Work Week

= Lot Traceabililty

Operating Junction and Storage

Temperature

T ,

−55 to

+175

°C

STG

Source Current (Body Diode)

ORDERING INFORMATION

Single Pulse Drain−to−Source Avalanche

†

Energy (T = 25°C, I = 29 A , L = 0.1 mH)

Device

Package

Shipping

NVMFS4C05NT1G

SO−8 FL

(Pb−Free) Tape & Reel

1500 /

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

NVMFS4C05NT3G

SO−8 FL 5000 /

(Pb−Free) Tape & Reel

SO−8 FL 1500 /

(Pb−Free) Tape & Reel

SO−8 FL 5000 /

(Pb−Free) Tape & Reel

NVMFS4C05NWFT1G

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using 650 mm , 2 oz Cu pad.

NVMFS4C05NWFT3G

3. Assumes heat−sink sufficiently large to maintain constant case temperature

independent of device power.

4. Continuous DC current rating. Maximum current for pulses as long as one

second is higher but dependent on pulse duration and duty cycle.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2014 − Rev. 1

NVMFS4C05N/D

12 3 4 5 6

中文翻译

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与NVMFS4C05N相关器件

型号	品牌	获取价格	描述	数据表
NVMFS4C05N_16	ONSEMI	获取价格	Power MOSFET
NVMFS4C05NT1G	ONSEMI	获取价格	Power MOSFET
NVMFS4C05NT3G	ONSEMI	获取价格	Power MOSFET
NVMFS4C05NWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS4C05NWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS4C302NT1G	ONSEMI	获取价格	Single N−Channel Logic Level Power MOSFET 30
NVMFS4C302NWFT1G	ONSEMI	获取价格	Single N−Channel Logic Level Power MOSFET 30
NVMFS4C306NT1G	ONSEMI	获取价格	Power MOSFET 30V, 116A, 3.4 mΩ, Single N-Chan
NVMFS4C306NWFT1G	ONSEMI	获取价格	Power MOSFET 30V, 116A, 3.4 mΩ, Single N-Chan
NVMFS4C308NT1G	ONSEMI	获取价格	Power MOSFET 30V, 55A, 4.8 mΩ, Single N-Chann

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