Datasheet > NVMFS5113PLT1G

NVMFS5113PLT1G

更新时间： 2024-11-17 14:53:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	226K
描述
Power MOSFET ?60V, 64A, 14 mOhm, Single P-Channel, SO8-FL, Logic Level.

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NVMFS5113PLT1G 数据手册

NVMFS5113PL

MOSFET – Power, Single

P-Channel

-60 V, 14 mW, -64 A

Features

• Low R

to Minimize Conduction Losses

• High Current Capability

DS(on)

www.onsemi.com

• Avalanche Energy Specified

• NVMFS5113PLWF − Wettable Flanks Product

• NVM Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

(BR)DSS

DS(on)

14 mW @ −10 V

22 mW @ −4.5 V

−60 V

−64 A

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

S (1, 2, 3)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

G (4)

Parameter

Drain−to−Source Voltage

Symbol

Value

−60

"20

−64

−45

150

Unit

P−Channel

DSS

Gate−to−Source Voltage

D (5, 6)

Continuous Drain Cur-

= 25°C

= 100°C

= 25°C

rent R

(Notes 1, 2, 3)

Steady

State

MARKING

DIAGRAM

Power Dissipation R

(Notes 1, 2)

= 100°C

Continuous Drain Cur-

rent R (Notes 1, 2, 3)

T = 25°C

−10

−7

XXXXXX

AYWZZ

T = 100°C

Steady

State

DFN5

CASE 488AA

STYLE 1

Power Dissipation R

(Notes 1, 2)

T = 25°C

3.8

T = 100°C

1.9

Pulsed Drain Current

T = 25°C, t = 10 ms

−415

= Assembly Location

= Year

= Work Week

= Lot Traceability

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Source Current (Body Diode)

−150

Single Pulse Drain−to−Source Avalanche

315

Energy (T = 25°C, V = 50 V, V = 10 V,

ORDERING INFORMATION

= 46 A, L = 0.3 mH, R = 25 W)

L(pk)

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Drain)

(Note 2)

1.0

°C/W

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Continuous DC current rating. Maximum current for pulses as long as

1 second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

July, 2019 − Rev. 3

NVMFS5113PL/D

12 3 4 5 6 7

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与NVMFS5113PLT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS5113PLWFT1G	ONSEMI	获取价格	Power MOSFET ?60V, 64A, 14 mOhm, Single P-Channel, SO8-FL, Logic Level.
NVMFS5826NL	ONSEMI	获取价格	Power MOSFET 60 V, 24 m, 26 A, Single NâCh
NVMFS5826NLT1G	ONSEMI	获取价格	Power MOSFET 60 V, 24 m, 26 A, Single NâCh
NVMFS5826NLT3G	ONSEMI	获取价格	Power MOSFET 60 V, 24 m, 26 A, Single NâCh
NVMFS5826NLWFT1G	ONSEMI	获取价格	Power MOSFET 60 V, 24 m, 26 A, Single NâCh
NVMFS5826NLWFT3G	ONSEMI	获取价格	Power MOSFET 60 V, 24 m, 26 A, Single NâCh
NVMFS5830NL	ONSEMI	获取价格	40 V, 2.3 m, 185 A, Single NâChannel
NVMFS5830NL_13	ONSEMI	获取价格	Power MOSFET 40 V, 2.3 m, 185 A, Single N.Channel
NVMFS5830NLT1G	ONSEMI	获取价格	Power MOSFET 40 V, 2.3 m, 185 A, Single N.Channel
NVMFS5830NLT3G	ONSEMI	获取价格	Power MOSFET 40 V, 2.3 m, 185 A, Single N.Channel

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