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NVMFS4C308NT1G

更新时间： 2024-09-30 11:13:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 294K
描述
Power MOSFET 30V, 55A, 4.8 mΩ, Single N-Channel, SO8-FL, Logic Level.

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NVMFS4C308NT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, DFN5/DFNW5  
30 V, 4.8 mW, 55 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
4.8 mW @ 10 V  
7.0 mW @ 4.5 V  
30 V  
55 A  
NVMFS4C308N  
D (5−8)  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• AEC−Q101 Qualified and PPAP Capable  
G (4)  
S (1,2,3)  
N−CHANNEL MOSFET  
• NVMFS4C308NWF − Wettable Flanks Option for Enhanced Optical  
Inspection  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
MARKING  
DIAGRAM  
D
Compliant  
DFN5  
CASE 488AA  
Applications  
1
• Reverse Battery Protection  
• DC−DC Converters Output Driver  
S
S
S
G
D
D
XXXXXX  
AYWZZ  
DFNW5  
CASE 507BA  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
D
4C08N = Specific Device Code for  
NVMFS4C308N  
4C08WF= Specific Device Code of  
NVMFS4C308NWF  
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
V
GS  
20  
V
A
Y
= Assembly Location  
= Year  
Continuous Drain  
Current R  
T = 25°C  
17.2  
12.3  
3
A
A
I
D
q
JA  
W
ZZ  
= Work Week  
= Lot Traceabililty  
T = 100°C  
A
(Notes 1, 2)  
Power Dissipation  
T = 25°C  
A
W
P
D
R
(Notes 1, 2)  
q
JA  
ORDERING INFORMATION  
Continuous Drain  
Current R  
T
= 25°C  
55  
39  
C
Steady  
State  
q
JC  
†
Device  
Package  
Shipping  
(Notes 1, 2, 3)  
I
D
A
NVMFS4C308NT1G  
DFN5  
1500 /  
Continuous Drain  
Current R  
T = 100°C  
C
(Pb−Free) Tape & Reel  
q
JC  
(Notes 1, 2, 3)  
NVMFS4C308NWFT1G DFNW5 1500 /  
Power Dissipation  
T
= 25°C  
P
30.6  
144  
W
(Pb−Free) Tape & Reel  
C
D
R
(Notes 1, 2, 3)  
q
JC  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature T , T  
Range  
−55 to  
+175  
°C  
J
STG  
Source Current (Body Diode)  
I
23  
42  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 10 V, I = 29 A ,  
J
GS  
L
pk  
L = 0.1 mH, R = 25 W) (Note 3)  
GS  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. This is the absolute maximum rating. Parts are 100% tested at T = 25°C,  
J
V
GS  
= 10 V, I = 21 Apk, E = 22 mJ.  
L AS  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
September, 2021 − Rev. 1  
NVMFS4C308N/D  
 
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