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NVMFS5832NLT3G

更新时间： 2024-11-16 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 118K
描述
40 V, 4.2 m, 120 A, Single N−Channel

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NVMFS5832NLT3G 数据手册

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NVMFS5832NL  
Power MOSFET  
40 V, 4.2 mW, 120 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
G
• AEC−Q101 Qualified  
• These are Pb−Free Devices  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
4.2 mW @ 10 V  
6.5 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
40 V  
120 A  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
20  
V
GS  
D (5,6)  
Continuous Drain Cur-  
T
= 25°C  
I
120  
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
= 100°C  
84  
2, 3, 4)  
Steady  
State  
Power Dissipation  
T
mb  
= 25°C  
P
127  
64  
W
A
D
G (4)  
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
Continuous Drain Cur-  
T = 25°C  
I
21  
A
D
S (1,2,3)  
N−CHANNEL MOSFET  
rent R  
4)  
(Notes 1, 3,  
q
JA  
T = 100°C  
A
15  
Steady  
State  
Power Dissipation  
(Notes 1 & 3)  
T = 25°C  
P
3.7  
1.9  
557  
W
A
D
R
q
JA  
T = 100°C  
A
MARKING  
DIAGRAM  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
+ 175  
S
S
S
G
D
D
1
V5832L  
AYWZZ  
Source Current (Body Diode)  
I
S
120  
134  
A
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 10 V, I = 52 A,  
J
GS  
L(pk)  
D
L = 0.1 mH, R = 25 W)  
G
A
Y
= Assembly Location  
= Year  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
W
ZZ  
= Work Week  
= Lot Traceability  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
THERMAL RESISTANCE MAXIMUM RATINGS  
†
Parameter  
Symbol  
Value  
Unit  
Device  
Package  
Shipping  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
1.2  
°C/W  
NVMFS5832NLT1G  
SO−8FL  
(Pb−Free)  
1500 /  
Tape & Reel  
Y
J−mb  
Junction−to−Ambient − Steady State (Note 3)  
R
40  
q
JA  
NVMFS5832NLT3G  
SO−8FL  
5000 /  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
(Pb−Free)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
June, 2012 − Rev. 1  
NVMFS5832NL/D  
 
123456

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