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NVMFS5844NL

更新时间： 2024-11-16 12:01:19
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安森美 - ONSEMI /
页数 文件大小 规格书
6页 111K
描述
Power MOSFET 60 V, 61 A, 12 m, Single N.Channel

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NVMFS5844NL 数据手册

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NTMFS5844NL,  
NVMFS5844NL  
Power MOSFET  
60 V, 61 A, 12 mW, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
http://onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• AEC−Q101 Qualified and PPAP Capable  
• These are Pb−Free Devices  
12 mW @ 10 V  
16 mW @ 4.5 V  
60 V  
61 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
D (5)  
V
DSS  
Gate−to−Source Voltage  
V
"20  
61  
V
GS  
Continuous Drain Cur-  
T
= 25°C  
I
A
mb  
D
rent R  
(Notes 1,  
Y
G (4)  
J−mb  
T = 100°C  
mb  
43  
2, 3, 4)  
Steady  
State  
Power Dissipation  
T
mb  
= 25°C  
P
107  
54  
W
A
D
S (1,2,3)  
N−CHANNEL MOSFET  
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
Continuous Drain Cur-  
T = 25°C  
I
11.2  
A
D
rent R  
4)  
(Notes 1, 3,  
q
JA  
T = 100°C  
A
8.0  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Notes 1 & 3)  
T = 25°C  
P
3.7  
1.8  
247  
80  
W
A
D
R
q
JA  
T = 100°C  
A
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
A
A
1
S
S
S
G
D
D
A
p
DM  
I
DmaxPkg  
DFN5  
5844NL  
AYWZZ  
Current Limited by Package  
(Note 4)  
T = 25°C  
A
(SO−8FL)  
CASE 488AA  
STYLE 1  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
60  
48  
A
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I
= 31 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
NTMFS5844NLT1G  
NVMFS5844NLT1G  
NVMFS5844NLT3G  
DFN5  
(Pb−Free)  
1500/Tape & Reel  
1500/Tape & Reel  
5000/Tape & Reel  
THERMAL RESISTANCE MAXIMUM RATINGS  
DFN5  
(Pb−Free)  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
1.4  
°C/W  
Y
J−mb  
DFN5  
(Pb−Free)  
Junction−to−Ambient − Steady State (Note 3)  
R
41  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
March, 2013 − Rev. 4  
NTMFS5844NL/D  
 
123456

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