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NVMFS5844NLWFT1G PDF预览

NVMFS5844NLWFT1G

更新时间： 2024-01-01 10:32:58
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管功率场效应晶体管
页数 文件大小 规格书
6页 117K
描述
功率 MOSFET，单 N 沟道，逻辑电平，60 V，61 A，12 mΩ

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NVMFS5844NLWFT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DFN包装说明：SMALL OUTLINE, R-PDSO-F5
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：4 weeks
风险等级：0.63外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：61 A最大漏源导通电阻：0.016 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：107 W
最大脉冲漏极电流 (IDM)：247 A参考标准：AEC-Q101
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

NVMFS5844NLWFT1G 数据手册

 浏览型号NVMFS5844NLWFT1G的Datasheet PDF文件第2页浏览型号NVMFS5844NLWFT1G的Datasheet PDF文件第3页浏览型号NVMFS5844NLWFT1G的Datasheet PDF文件第4页浏览型号NVMFS5844NLWFT1G的Datasheet PDF文件第5页浏览型号NVMFS5844NLWFT1G的Datasheet PDF文件第6页 
NTMFS5844NL,  
NVMFS5844NL  
Power MOSFET  
60 V, 61 A, 12 mW, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
http://onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• NVMFS Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
12 mW @ 10 V  
16 mW @ 4.5 V  
60 V  
61 A  
• These are Pb−Free Devices  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D (5)  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
"20  
61  
V
GS  
Continuous Drain Cur-  
T
= 25°C  
I
A
G (4)  
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T = 100°C  
mb  
43  
2, 3, 4)  
Steady  
State  
S (1,2,3)  
N−CHANNEL MOSFET  
Power Dissipation  
T
mb  
= 25°C  
P
107  
54  
W
A
D
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
Continuous Drain Cur-  
T = 25°C  
I
11.2  
A
D
rent R  
4)  
(Notes 1, 3,  
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
8.0  
Steady  
State  
Power Dissipation  
(Notes 1 & 3)  
T = 25°C  
P
3.7  
1.8  
247  
80  
W
A
D
D
R
q
JA  
T = 100°C  
A
1
S
S
S
G
D
D
5844NL  
AYWZZ  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
A
A
A
p
DM  
I
DmaxPkg  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Current Limited by Package  
(Note 4)  
T = 25°C  
A
D
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Source Current (Body Diode)  
I
60  
48  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I
= 31 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
NTMFS5844NLT1G  
NVMFS5844NLT1G  
NVMFS5844NLT3G  
DFN5  
(Pb−Free)  
1500/Tape & Reel  
1500/Tape & Reel  
5000/Tape & Reel  
THERMAL RESISTANCE MAXIMUM RATINGS  
DFN5  
(Pb−Free)  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
1.4  
°C/W  
Y
J−mb  
DFN5  
(Pb−Free)  
Junction−to−Ambient − Steady State (Note 3)  
R
41  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
June, 2012 − Rev. 3  
NTMFS5844NL/D  
 
123456

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