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NVMFS5885NLT1G

更新时间： 2024-01-20 02:15:28
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 121K
描述
Single N−Channel Power MOSFET

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NVMFS5885NLT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,针数：5
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：29 weeks风险等级：6.75
配置：Single最大漏极电流 (Abs) (ID)：39 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e3
湿度敏感等级：1最高工作温度：175 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：54 W子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NVMFS5885NLT1G 数据手册

 浏览型号NVMFS5885NLT1G的Datasheet PDF文件第2页浏览型号NVMFS5885NLT1G的Datasheet PDF文件第3页浏览型号NVMFS5885NLT1G的Datasheet PDF文件第4页浏览型号NVMFS5885NLT1G的Datasheet PDF文件第5页浏览型号NVMFS5885NLT1G的Datasheet PDF文件第6页 
NVMFS5885NL  
Power MOSFET  
60 V, 15 mW, 39 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
http://onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• NVMFS5885NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• These Devices are Pb−Free and are RoHS Compliant  
15 mW @ 10 V  
21 mW @ 4.5 V  
60 V  
39 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
D (5,6)  
Gate−to−Source Voltage  
V
"20  
39  
V
GS  
Continuous Drain Cur-  
T
= 25°C  
I
A
mb  
D
rent R  
2, 3)  
(Notes 1,  
Y
J−mb  
T
mb  
= 100°C  
28  
Steady  
State  
G (4)  
Power Dissipation  
(Notes 1, 2, 3)  
T
mb  
= 25°C  
P
54  
27  
W
A
D
R
Y
J−mb  
T
mb  
= 100°C  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain Cur-  
T = 25°C  
I
10.2  
A
D
rent R  
3)  
(Notes 1 &  
q
JA  
T = 100°C  
A
7.2  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Notes 1 & 3)  
T = 25°C  
P
3.7  
1.8  
179  
W
A
D
R
q
JA  
T = 100°C  
A
D
1
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
S
S
S
G
D
D
DFN5  
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
XXXXXX  
AYWZZ  
175  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Source Current (Body Diode)  
I
S
46  
49  
A
D
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
A
Y
= Assembly Location  
= Year  
I
= 18 A, L = 0.3 mH, R = 25 W)  
L(pk)  
G
W
ZZ  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
2.8  
°C/W  
Y
J−mb  
Junction−to−Ambient − Steady State (Note 3)  
R
41  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 − Rev. 3  
NVMFS5885NL/D  
 
123456

中文翻译

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NVMFS5885NLT1G 替代型号

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