NVMFS5A160PLZ
Advance Information
Power MOSFET
−
60 V, 7.7 mΩ, 100 A, Single P-Channel
−
www.onsemi.com
Features
• Small Footprint (5 × 6 mm) for Compact Design
• Low R (on) to Minimize Conduction Losses
• NVMFS5A160PLZWF :
DS
V
R
DS
(on) Max
I
DSS
D Max
Wettable Flank Option for Enhanced Optical Inspection
• AEC-Q101 Qualified and PPAP Capable
• Pb-Free and RoHS compliance
7.7 mΩ @ −10 V
−60 V
−100 A
10.5 mΩ @ −4.5 V
ELECTRICAL CONNECTION
SPECIFICATIONS
D (5)
ABSOLUTE MAXIMUM RATINGS at Tj = 25°C unless otherwise noted
(Notes 1, 2, 3, 4)
Parameter
Drain to Source Voltage
Symbol
Value
Unit
V
1 : Source
V
−60
DSS
2 : Source
3 : Source
4 : Gate
V
Gate to Source Voltage
Continuous Drain
20
V
GS
G (4)
R
T
T
T
T
= 25°C
= 25°C
= 25°C
= 25°C
I
A
W
A
5 : Drain
−100
200
Current θJC
C
C
A
A
D
Steady
State
(Notes 2, 4)
Power Dissipation
S (1,2,3)
P
D
R
θJC
(Note 2)
P-Channel MOSFET
Continuous Drain
R
I
−15
Current θJA
D
Steady
State
(Notes 2, 3, 4)
MARKING DIAGRAM
Power Dissipation
P
D
3.8
W
A
D
R
θJA
(Notes 2, 3)
S
S
S
G
D
D
Pulsed Drain
PW ≤ 10 μs,
duty cycle ≤ 1%
I
DFN5
(SO-8FL)
−400
DP
XXXXXX
AYWZZ
Current
T ,
J
Operating Junction and Storage Temperature
−55 to +175
−100
°C
A
T
stg
D
I
Source Current (Body Diode)
S
Specific Device Code
5A160L(NVMFS5A160PLZ)
160LWF(NVMFS5A160PLZWF)
XXXXXX=
Single Pulse Drain to Source Avalanche
E
T
335
mJ
AS
Energy (L = 1.0 mH, I
= −26 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
260
°C
L
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.75
39
Unit
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
R
Junction to Case Steady State
θJC
θJA
°C/W
R
Junction to Ambient Steady State (Note 3)
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
Note 3 : Surface mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
Note 4 : Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. P2
1
Publication Order Number :
NVMFS5A160PLZ /D