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NVMFS5A160PLZ PDF预览

NVMFS5A160PLZ

更新时间: 2024-01-09 05:32:36
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描述
Power MOSFET

NVMFS5A160PLZ 数据手册

 浏览型号NVMFS5A160PLZ的Datasheet PDF文件第2页浏览型号NVMFS5A160PLZ的Datasheet PDF文件第3页浏览型号NVMFS5A160PLZ的Datasheet PDF文件第4页浏览型号NVMFS5A160PLZ的Datasheet PDF文件第5页浏览型号NVMFS5A160PLZ的Datasheet PDF文件第6页 
NVMFS5A160PLZ  
Advance Information  
Power MOSFET  
60 V, 7.7 m, 100 A, Single P-Channel  
www.onsemi.com  
Features  
Small Footprint (5 × 6 mm) for Compact Design  
Low R (on) to Minimize Conduction Losses  
NVMFS5A160PLZWF :  
DS  
V
R
DS  
(on) Max  
I
DSS  
D Max  
Wettable Flank Option for Enhanced Optical Inspection  
AEC-Q101 Qualified and PPAP Capable  
Pb-Free and RoHS compliance  
7.7 m@ 10 V  
60 V  
100 A  
10.5 m@ 4.5 V  
ELECTRICAL CONNECTION  
SPECIFICATIONS  
D (5)  
ABSOLUTE MAXIMUM RATINGS at Tj = 25°C unless otherwise noted  
(Notes 1, 2, 3, 4)  
Parameter  
Drain to Source Voltage  
Symbol  
Value  
Unit  
V
1 : Source  
V
60  
DSS  
2 : Source  
3 : Source  
4 : Gate  
V
Gate to Source Voltage  
Continuous Drain  
20  
V
GS  
G (4)  
R
T
T
T
T
= 25°C  
= 25°C  
= 25°C  
= 25°C  
I
A
W
A
5 : Drain  
100  
200  
Current θJC  
C
C
A
A
D
Steady  
State  
(Notes 2, 4)  
Power Dissipation  
S (1,2,3)  
P
D
R
θJC  
(Note 2)  
P-Channel MOSFET  
Continuous Drain  
R
I
15  
Current θJA  
D
Steady  
State  
(Notes 2, 3, 4)  
MARKING DIAGRAM  
Power Dissipation  
P
D
3.8  
W
A
D
R
θJA  
(Notes 2, 3)  
S
S
S
G
D
D
Pulsed Drain  
PW 10 μs,  
duty cycle 1%  
I
DFN5  
(SO-8FL)  
400  
DP  
XXXXXX  
AYWZZ  
Current  
T ,  
J
Operating Junction and Storage Temperature  
55 to +175  
100  
°C  
A
T
stg  
D
I
Source Current (Body Diode)  
S
Specific Device Code  
5A160L(NVMFS5A160PLZ)  
160LWF(NVMFS5A160PLZWF)  
XXXXXX=  
Single Pulse Drain to Source Avalanche  
E
T
335  
mJ  
AS  
Energy (L = 1.0 mH, I  
= 26 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8" from case for 10 s)  
260  
°C  
L
A
Y
= Assembly Location  
= Year  
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
0.75  
39  
Unit  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 6 of this data sheet.  
R
Junction to Case Steady State  
θJC  
θJA  
°C/W  
R
Junction to Ambient Steady State (Note 3)  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
Note 2 : The entire application environment impacts the thermal resistance values  
shown, they are not constants and are only valid for the particular conditions  
noted.  
Note 3 : Surface mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.  
Note 4 : Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
This document contains information on a new product. Specifications and information  
herein are subject to change without notice.  
© Semiconductor Components Industries, LLC, 2016  
December 2016 - Rev. P2  
1
Publication Order Number :  
NVMFS5A160PLZ /D