Datasheet > NVMFS5C404NLT3G

NVMFS5C404NLT3G

更新时间： 2024-11-17 00:56:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	128K
描述
Power MOSFET

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NVMFS5C404NLT3G 数据手册

NVMFS5C404NL

Power MOSFET

40 V, 0.67 mW, 370 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFS5C404NLWF − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(ON)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

0.67 mW @ 10 V

1.0 mW @ 4.5 V

40 V

370 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5,6)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (4)

Continuous Drain

Current R

= 25°C

370

= 100°C

260

(Notes 1, 3)

Steady

State

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

= 25°C

200

100

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.9

1.9

900

(Notes 1 & 2)

T = 100°C

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

Source Current (Body Diode)

191

907

XXXXXX = 5C404L

XXXXXX = (NVMFS5C404NL) or

XXXXXX = 404LWF

Single Pulse Drain−to−Source Avalanche

Energy (I

= 38 A)

L(pk)

XXXXXX = (NVMFS5C404NLWF)

Lead Temperature for Soldering Purposes

260

°C

= Assembly Location

= Year

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Work Week

= Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Junction−to−Case − Steady State

0.75

°C/W

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

February, 2017 − Rev. 7

NVMFS5C404NL/D

12 3 4 5 6

中文翻译

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NVMFS5C404NLT3G 替代型号

型号	品牌	替代类型	描述	数据表
NVMFS5C404NLWFT3G	ONSEMI	功能相似	Power MOSFET
NVMFS5C404NLWFT1G	ONSEMI	功能相似	Power MOSFET

与NVMFS5C404NLT3G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS5C404NLWFAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C404NLWFAFT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，370A，0.67mΩ
NVMFS5C404NLWFET1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，370A，0.67mΩ
NVMFS5C404NLWFET3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，370A，0.67mΩ
NVMFS5C404NLWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C404NLWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C404NT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C404NT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C404NWFAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C404NWFET1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，378A，0.7mΩ

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