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NVMFS5C410NLT1G PDF预览

NVMFS5C410NLT1G

更新时间： 2024-02-08 06:32:45
品牌 Logo 应用领域
安森美 - ONSEMI /
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6页 123K
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Power MOSFET

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NVMFS5C410NLT1G 数据手册

 浏览型号NVMFS5C410NLT1G的Datasheet PDF文件第2页浏览型号NVMFS5C410NLT1G的Datasheet PDF文件第3页浏览型号NVMFS5C410NLT1G的Datasheet PDF文件第4页浏览型号NVMFS5C410NLT1G的Datasheet PDF文件第5页浏览型号NVMFS5C410NLT1G的Datasheet PDF文件第6页 
NVMFS5C410NL  
Power MOSFET  
40 V, 0.82 mW, 330 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• NVMFS5C410NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
0.82 mW @ 10 V  
1.2 mW @ 4.5 V  
40 V  
330 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D (5,6)  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
G (4)  
Continuous Drain  
Current R  
T
= 25°C  
I
330  
A
C
D
q
JC  
T
C
= 100°C  
230  
(Notes 1, 3)  
Steady  
State  
S (1,2,3)  
N−CHANNEL MOSFET  
Power Dissipation  
T
C
= 25°C  
P
167  
83  
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
50  
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
35  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.8  
1.9  
900  
W
D
D
R
(Notes 1 & 2)  
q
JA  
1
T = 100°C  
A
S
S
S
G
D
D
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
XXXXXX  
AYWZZ  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
169  
706  
A
S
XXXXXX = 5C410L  
XXXXXX = (NVMFS5C410NL) or  
XXXXXX = 410LWF  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 29 A)  
L(pk)  
XXXXXX = (NVMFS5C410NLWF)  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
(1/8″ from case for 10 s)  
A
Y
= Assembly Location  
= Year  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Junction−to−Case − Steady State  
R
0.9  
39  
°C/W  
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
February, 2017 − Rev. 7  
NVMFS5C410NL/D  
 
123456

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