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NVMFS5C420NLWFT1G

更新时间： 2024-09-26 02:52:39
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安森美 - ONSEMI /
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6页 141K
描述
MOSFET – Power, Single N-Channel

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NVMFS5C420NLWFT1G 数据手册

 浏览型号NVMFS5C420NLWFT1G的Datasheet PDF文件第2页浏览型号NVMFS5C420NLWFT1G的Datasheet PDF文件第3页浏览型号NVMFS5C420NLWFT1G的Datasheet PDF文件第4页浏览型号NVMFS5C420NLWFT1G的Datasheet PDF文件第5页浏览型号NVMFS5C420NLWFT1G的Datasheet PDF文件第6页 
MOSFET – Power, Single  
N-Channel  
40 V, 1.0 mW, 277 A  
NVMFS5C420NL  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• NVMFS5C420NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
1.0 mW @ 10 V  
1.4 mW @ 4.5 V  
40 V  
277 A  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
D (5,6)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
G (4)  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
277  
196  
146  
73  
A
C
D
q
JC  
S (1,2,3)  
N−CHANNEL MOSFET  
T
C
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
MARKING  
DIAGRAM  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
45  
q
JA  
T = 100°C  
A
32  
(Notes 1, 2, 3)  
Steady  
State  
D
1
Power Dissipation  
T = 25°C  
A
P
3.8  
1.9  
900  
W
D
S
S
S
G
D
D
R
(Notes 1, 2)  
q
JA  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
XXXXXX  
AYWZZ  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
XXXXXX = 5C420L  
XXXXXX = (NVMFS5C420NL) or  
XXXXXX = 420LWF  
XXXXXX = (NVMFS5C420NLWF)  
Source Current (Body Diode)  
I
121.4  
1541  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 24 A)  
L(pk)  
A
Y
= Assembly Location  
= Year  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
W
ZZ  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
1.0  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
39  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
September, 2019 − Rev. 0  
NVMFS5C420NL/D  
 
123456

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