Datasheet > NVMFS5C420NWFT1G

NVMFS5C420NWFT1G

更新时间： 2024-02-27 05:00:28

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	143K
描述
MOSFET â Power, Single N-Channel

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NVMFS5C420NWFT1G 数据手册

MOSFET – Power, Single

N-Channel

40 V, 1.1 mW, 268 A

NVMFS5C420N

Features

• Small Footprint (5x6 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• NVMFS5C420NWF − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(ON)

40 V

1.1 mW @ 10 V

268 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5,6)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (4)

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

268

190

150

(Notes 1, 3)

Steady

State

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.8

1.9

900

(Notes 1, 2)

T = 100°C

XXXXXX

AYWZZ

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

XXXXXX = 5C420N

XXXXXX = (NVMFS5C420N) or

XXXXXX = 420NWF

Source Current (Body Diode)

125

Single Pulse Drain−to−Source Avalanche

1541

Energy (I

= 24 A)

L(pk)

XXXXXX = (NVMFS5C420NWF)

= Assembly Location

= Year

= Work Week

= Lot Traceability

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

1.0

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

September, 2020 − Rev. 0

NVMFS5C420N/D

12 3 4 5 6

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