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NVMFS5C430NL_17

更新时间： 2024-01-26 05:55:33
品牌 Logo 应用领域
安森美 - ONSEMI /
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6页 125K
描述
Power MOSFET

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NVMFS5C430NL_17 数据手册

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NVMFS5C430NL  
Power MOSFET  
40 V, 1.4 mW, 200 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• NVMFS5C430NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
1.4 mW @ 10 V  
2.2 mW @ 4.5 V  
40 V  
200 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
D (5,6)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
I
200  
A
C
D
G (4)  
q
JC  
T
C
= 100°C  
140  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
= 25°C  
P
110  
53  
W
A
D
S (1,2,3)  
N−CHANNEL MOSFET  
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
38  
q
JA  
T = 100°C  
A
27  
(Notes 1, 2, 3)  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
T = 25°C  
A
P
3.8  
1.9  
900  
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
D
1
S
S
S
G
D
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
XXXXXX  
AYWZZ  
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
+ 175  
Source Current (Body Diode)  
I
S
120  
493  
A
D
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
XXXXXX = 5C430L  
XXXXXX = (NVMFS5C430NL) or  
XXXXXX = 430LWF  
Energy (I  
= 15 A)  
L(pk)  
Single Pulse Drain−to−Source Voltage  
(t = 10 ms)  
p
V
DSM  
48  
V
XXXXXX = (NVMFS5C430NLWF)  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
1.4  
40  
°C/W  
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
February, 2017 − Rev. 3  
NVMFS5C430NL/D  
 
123456

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