NVMFS5C442NL
Power MOSFET
40 V, 2.5 mW, 130 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• NVMFS5C442NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
2.5 mW @ 10 V
3.7 mW @ 4.5 V
40 V
130 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
D (5)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
(Notes 1, 3)
T
= 25°C
I
130
A
C
D
q
JC
G (4)
T
C
= 100°C
95
Steady
State
Power Dissipation
T
C
= 25°C
P
83
42
28
W
A
D
R
(Note 1)
q
JC
S (1,2,3)
N−CHANNEL MOSFET
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
20
(Notes 1, 2, 3)
Steady
State
MARKING
DIAGRAM
Power Dissipation
T = 25°C
A
P
3.7
1.8
900
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
D
1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
S
S
S
G
D
D
A
p
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX
AYWZZ
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
81
A
D
Single Pulse Drain−to−Source Avalanche
E
AS
265
mJ
XXXXXX = 5C442L
Energy (I
= 10 A)
L(pk)
XXXXXX = (NVMFS5C442NL) or
XXXXXX = 442LWF
XXXXXX = (NVMFS5C442NLWF)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
1.8
41
°C/W
q
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
Junction−to−Ambient − Steady State (Note 2)
R
JA
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
2
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2017 − Rev. 6
NVMFS5C442NL/D