Datasheet > NVMFS5C442NLT3G

NVMFS5C442NLT3G

更新时间： 2024-01-01 17:43:10

品牌	Logo	应用领域
安森美 - ONSEMI		/
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6页	79K
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Power MOSFET

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NVMFS5C442NLT3G 数据手册

NVMFS5C442NL

Power MOSFET

40 V, 2.5 mW, 130 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFS5C442NLWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

2.5 mW @ 10 V

3.7 mW @ 4.5 V

40 V

130 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

(Notes 1, 3)

= 25°C

130

G (4)

= 100°C

Steady

State

Power Dissipation

= 25°C

(Note 1)

S (1,2,3)

N−CHANNEL MOSFET

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

MARKING

DIAGRAM

Power Dissipation

T = 25°C

3.7

1.8

900

(Notes 1 & 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

Operating Junction and Storage Temperature

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

265

XXXXXX = 5C442L

Energy (I

= 10 A)

L(pk)

XXXXXX = (NVMFS5C442NL) or

XXXXXX = 442LWF

XXXXXX = (NVMFS5C442NLWF)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

1.8

°C/W

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

Junction−to−Ambient − Steady State (Note 2)

package dimensions section on page 5 of this data sheet.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

April, 2017 − Rev. 6

NVMFS5C442NL/D

12 3 4 5 6

中文翻译

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NVMFS5C442NLT3G 替代型号

型号	品牌	替代类型	描述	数据表
NVMFS5C442NLWFT3G	ONSEMI	类似代替	Power MOSFET
NVMFS5C442NLWFT1G	ONSEMI	类似代替	Power MOSFET
NVMFS5C442NLT1G	ONSEMI	类似代替	Power MOSFET

与NVMFS5C442NLT3G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS5C442NLWFAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C442NLWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C442NLWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C442NT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C442NT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C442NWFAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C442NWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C442NWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C450N	ONSEMI	获取价格	Power MOSFET
NVMFS5C450N_17	ONSEMI	获取价格	Power MOSFET

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