Datasheet > NVMFS5C456NLT3G

NVMFS5C456NLT3G

更新时间： 2024-01-06 09:48:53

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	127K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVMFS5C456NLT3G 数据手册

NVMFS5C456NL

Power MOSFET

40 V, 3.7 mW, 87 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFS5C456NLWF − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(ON)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

3.7 mW @ 10 V

6.0 mW @ 4.5 V

40 V

87 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5,6)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

G (4)

(Notes 1, 3)

Steady

State

Power Dissipation

= 25°C

(Note 1)

S (1,2,3)

N−CHANNEL MOSFET

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

MARKING

DIAGRAM

Power Dissipation

T = 25°C

3.6

1.8

520

(Notes 1 & 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

°C

stg

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

+ 175

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

202

Energy (I

= 5 A)

L(pk)

XXXXXX = 5C456L

XXXXXX = (NVMFS5C456NL) or

XXXXXX = 456LWF

XXXXXX = (NVMFS5C456NLWF)

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Assembly Location

= Year

= Work Week

= Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

2.7

°C/W

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

February, 2017 − Rev. 5

NVMFS5C456NL/D

12 3 4 5 6

中文翻译

下载PDF

与NVMFS5C456NLT3G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS5C456NLWFAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C456NLWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C456NLWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C456NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，80A，4.5mΩ
NVMFS5C456NWFT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，80A，4.5mΩ
NVMFS5C460NL	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NL_17	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NLAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NLT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NLT3G	ONSEMI	获取价格	Power MOSFET

与NVMFS5C456NLT3G相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

4
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

4
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

4
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

5

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFS5C456NLT3G

NVMFS5C456NLT3G 数据手册

与NVMFS5C456NLT3G相关器件

与NVMFS5C456NLT3G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFS5C456NLT3G

NVMFS5C456NLT3G 数据手册

与NVMFS5C456NLT3G相关器件

与NVMFS5C456NLT3G相关文章

您还可以找

您在本页遇到什么问题？