Datasheet > NVMFS5C456NT1G

NVMFS5C456NT1G

更新时间： 2023-09-03 20:34:37

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	227K
描述
单 N 沟道，功率 MOSFET，40V，80A，4.5mΩ

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NVMFS5C456NT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

MAX

I MAX

(BR)DSS

DS(ON)

40 V

4.5 mW @ 10 V

80 A

40 V, 4.5 mW, 80 A

D (5,6)

NVMFS5C456N

Features

G (4)

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

S (1,2,3)

N−CHANNEL MOSFET

• Low Q and Capacitance to Minimize Driver Losses

• NVMFS5C456NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

XXXXXX = 5C456N

XXXXXX = (NVMFS5C456N) or

XXXXXX = 456NWF

(Notes 1, 3)

Steady

State

XXXXXX = (NVMFS5C456NWF)

Power Dissipation

= Assembly Location

= Year

(Note 1)

= 100°C

= Work Week

= Lot Traceability

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.6

1.8

400

(Notes 1 & 2)

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

45.5

239

Single Pulse Drain−to−Source Avalanche

Energy (I

= 5.22 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

2.7

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

March, 2023 − Rev. 3

NVMFS5C456N/D

12 3 4 5 6 7 8

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与NVMFS5C456NT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS5C456NWFT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，80A，4.5mΩ
NVMFS5C460NL	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NL_17	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NLAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NLT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NLT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NLWFAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NLWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NLWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C460NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，71A，5.3mΩ

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