NVMFS5C468NL
Power MOSFET
40 V, 10.3 mW, 37 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• NVMFS5C468NLWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
10.3 mW @ 10 V
17.6 mW @ 4.5 V
40 V
37 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
D (5,6)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
I
37
A
C
D
q
JC
G (4)
T
C
= 100°C
26
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
= 25°C
P
28
14
13
W
A
D
R
(Note 1)
q
JC
S (1,2,3)
N−CHANNEL MOSFET
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
9.2
(Notes 1, 2, 3)
Steady
State
MARKING
DIAGRAM
Power Dissipation
T = 25°C
A
P
3.5
1.7
190
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
D
1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
S
S
S
G
D
D
Operating Junction and Storage Temperature
T , T
−55 to
°C
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX
AYWZZ
J
stg
+ 175
Source Current (Body Diode)
I
S
31
95
A
D
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 2 A)
XXXXXX = 5C468L
L(pk)
XXXXXX = (NVMFS5C468NL) or
XXXXXX = 468LWF
XXXXXX = (NVMFS5C468NLWF)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
5.3
43
°C/W
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
February, 2017 − Rev. 3
NVMFS5C468NL/D