Datasheet > NVMFS5C612NWFT1G

NVMFS5C612NWFT1G

更新时间： 2024-10-03 11:12:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	230K
描述
单 N 沟道，功率 MOSFET，60V，225A，1.65mΩ

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NVMFS5C612NWFT1G 数据手册

NVMFS5C612N

Power MOSFET

Single N−Channel, 60 V, 1.65 mW, 225 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFS5C612NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

60 V

1.65 mW @ 10 V

225 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5,6)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (4)

Continuous Drain

Current R

= 25°C

225

= 100°C

158

(Notes 1, 3)

Steady

State

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

= 25°C

167

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.8

1.9

900

(Notes 1 & 2)

T = 100°C

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

164

451

XXXXXX = 5C612N

XXXXXX = (NVMFS5C612N) or

XXXXXX = 612NWF

Single Pulse Drain−to−Source Avalanche

Energy (I

= 17 A)

L(pk)

XXXXXX = (NVMFS5C612NWF)

Lead Temperature for Soldering Purposes

260

°C

= Assembly Location

= Year

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Work Week

= Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

0.9

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

April, 2019 − Rev. 0

NVMFS5C612N/D

12 3 4 5 6 7

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