Datasheet > NVMFS5C645NLWFAFT1G

NVMFS5C645NLWFAFT1G

更新时间： 2024-02-10 20:37:41

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安森美 - ONSEMI		/
页数	文件大小	规格书
6页	124K
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Power MOSFET

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NVMFS5C645NLWFAFT1G 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	not_compliant
Factory Lead Time：	6 weeks	风险等级：	1.48
JESD-609代码：	e3	湿度敏感等级：	1
端子面层：	Tin (Sn)	Base Number Matches：	1

NVMFS5C645NLWFAFT1G 数据手册

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NVMFS5C645NL

Power MOSFET

60 V, 4.0 mW, 100 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFS5C645NLWF − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(ON)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

4.0 mW @ 10 V

5.7 mW @ 4.5 V

60 V

100 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

100

G (4)

(Notes 1, 3)

Steady

State

Power Dissipation

S (1,2,3)

N−CHANNEL MOSFET

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

MARKING

DIAGRAM

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.7

1.8

820

(Notes 1 & 2)

T = 100°C

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

5C645L

AYWZZ

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

100

185

5C645L = Specific Device Code

Single Pulse Drain−to−Source Avalanche

= Assembly Location

= Year

Energy (I

= 5 A)

L(pk)

= Work Week

= Lot Traceability

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

1.9

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

February, 2017 − Rev. 2

NVMFS5C645NL/D

12 3 4 5 6

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与NVMFS5C645NLWFAFT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS5C645NLWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C645NLWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C645NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，60V，92A，4.6mΩ
NVMFS5C645NWFT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，60V，92A，4.6mΩ
NVMFS5C646NL	ONSEMI	获取价格	Power MOSFET
NVMFS5C646NL_17	ONSEMI	获取价格	Power MOSFET
NVMFS5C646NLAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C646NLT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C646NLT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C646NLWFAFT1G	ONSEMI	获取价格	Power MOSFET

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