Datasheet > NVMFS5C670NL

NVMFS5C670NL

更新时间： 2024-02-22 14:01:36

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	127K
描述
Power MOSFET

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数据手册

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NVMFS5C670NL 数据手册

NVMFS5C670NL

Power MOSFET

60 V, 6.1 mW, 71 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFS5C670NLWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

6.1 mW @ 10 V

8.8 mW @ 4.5 V

60 V

71 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

D (5,6)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

(Notes 1, 3)

Steady

State

G (4)

Power Dissipation

= 25°C

(Note 1)

= 100°C

S (1,2,3)

N−CHANNEL MOSFET

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.6

1.8

440

MARKING

DIAGRAM

(Notes 1 & 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

°C

stg

XXXXXX

AYWZZ

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

+ 175

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

166

Energy (I

= 3.6 A)

L(pk)

XXXXXX = 5C670L

XXXXXX = (NVMFS5C670NL) or

XXXXXX = 670LWF

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

XXXXXX = (NVMFS5C670NLWF)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Assembly Location

= Year

= Work Week

= Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

2.4

°C/W

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

February, 2017 − Rev. 2

NVMFS5C670NL/D

12 3 4 5 6

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与NVMFS5C670NL相关器件

型号	品牌	获取价格	描述	数据表
NVMFS5C670NL_17	ONSEMI	获取价格	Power MOSFET
NVMFS5C670NLAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C670NLAFT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，60V，71A，6.1mΩ
NVMFS5C670NLT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C670NLT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C670NLWFAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C670NLWFAFT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，60V，71A，6.1mΩ
NVMFS5C670NLWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C670NLWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C670NT1G	ONSEMI	获取价格	Power MOSFET 60 V, 7.0 mΩ, 71 A

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