NVMFS5C638NL
MOSFET – Power, Single
N-Channel
60 V, 3.0 mW, 133 A
Features
www.onsemi.com
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• NVMFS5C638NLWF − Wettable Flank Option for Enhanced Optical
Inspection
3.0 mW @ 10 V
4.2 mW @ 4.5 V
60 V
133 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D (5)
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
Gate−to−Source Voltage
V
20
V
GS
G (4)
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
133
94
A
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
S (1,2,3)
N−CHANNEL MOSFET
Power Dissipation
T
C
P
100
50
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
26
D
MARKING
DIAGRAM
q
JA
T = 100°C
A
18
(Notes 1, 2, 3)
Steady
State
D
Power Dissipation
T = 25°C
A
P
4
W
D
1
R
(Notes 1 & 2)
q
JA
S
S
S
G
D
D
T = 100°C
A
2
XXXXXX
AYWZZ
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
811
A
A
p
Operating Junction and Storage Temperature
T , T
J
−55 to
+ 175
°C
stg
D
XXXXXX = 5C638L
XXXXXX = (NVMFS5C638NL) or
XXXXXX = 638LWF
Source Current (Body Diode)
I
84
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
180
mJ
Energy (I
= 13 A)
L(pk)
XXXXXX = (NVMFS5C638NLWF)
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
T
260
°C
L
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Parameter
Symbol
Value
1.5
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
40.1
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
July, 2019 − Rev. 0
NVMFS5C638NL/D