Datasheet > NVMFS5C638NLWFT1G

NVMFS5C638NLWFT1G

更新时间： 2024-01-28 08:30:05

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	185K
描述
MOSFET â Power, Single N-Channel

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NVMFS5C638NLWFT1G 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	not_compliant
Factory Lead Time：	4 weeks	风险等级：	5.66
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

NVMFS5C638NLWFT1G 数据手册

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NVMFS5C638NL

MOSFET – Power, Single

N-Channel

60 V, 3.0 mW, 133 A

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• NVMFS5C638NLWF − Wettable Flank Option for Enhanced Optical

Inspection

3.0 mW @ 10 V

4.2 mW @ 4.5 V

60 V

133 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (4)

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

133

(Notes 1, 3)

Steady

State

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

100

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

(Notes 1 & 2)

T = 100°C

XXXXXX

AYWZZ

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

Pulsed Drain Current

T = 25°C, t = 10 ms

811

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

XXXXXX = 5C638L

XXXXXX = (NVMFS5C638NL) or

XXXXXX = 638LWF

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

180

Energy (I

= 13 A)

L(pk)

XXXXXX = (NVMFS5C638NLWF)

= Assembly Location

= Year

= Work Week

= Lot Traceability

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Parameter

Symbol

Value

1.5

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

40.1

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

July, 2019 − Rev. 0

NVMFS5C638NL/D

12 3 4 5 6 7

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