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NVMFS5C466NT1G

更新时间： 2023-09-03 20:35:49
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 297K
描述
Single N-Channel Power MOSFET 40V, 49A, 8.1mΩ

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NVMFS5C466NT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – Power, Single  
N-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
40 V  
8.1 mW @ 10 V  
49 A  
40 V, 8.1 mW, 49 A  
D (5,6)  
NVMFS5C466N  
Features  
G (4)  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
S (1,2,3)  
N−CHANNEL MOSFET  
G
• NVMFS5C466NWF − Wettable Flank Option for Enhanced Optical  
Inspection  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
DFN5 5x6, 1.27P  
(SO−8FL)  
CASE 488AA  
DFNW5 5x6  
(FULL−CUT SO8FL WF)  
CASE 507BA  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
49  
A
C
D
q
JC  
MARKING DIAGRAM  
T
C
35  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
37  
W
A
D
D
R
(Note 1)  
q
JC  
S
S
S
G
D
D
T
C
= 100°C  
19  
XXXXXX  
AYWZZ  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
15  
q
JA  
T = 100°C  
A
11  
(Notes 1, 2, 3)  
Steady  
State  
D
Power Dissipation  
T = 25°C  
A
P
3.5  
1.7  
226  
W
D
R
(Notes 1 & 2)  
XXXXXX = 5C466N  
XXXXXX = (NVMFS5C466N) or  
XXXXXX = 466NWF  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
XXXXXX = (NVMFS5C466NWF)  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
A
Y
= Assembly Location  
= Year  
W
ZZ  
= Work Week  
= Lot Traceability  
Source Current (Body Diode)  
I
31  
76  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 2.93 A)  
L(pk)  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
(1/8″ from case for 10 s)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
4.0  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
43  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
May, 2022 − Rev. 1  
NVMFS5C466N/D  
 
12345678

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